| PART |
Description |
Maker |
| STC06IE170HV |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?/a>
Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15 Ohm
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17з
|
http://
ST Microelectronics, Inc.
STMicroelectronics
|
| STP08IE120F4 P08IE120F4 |
Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm
|
STMICROELECTRONICS[STMicroelectronics]
|
| STC03DE170 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1700 V - 3 A - 0.55 Ohm
|
STMICROELECTRONICS[STMicroelectronics]
|
| STC03DE220HV C03DE220HV |
Hybrid emitter switched bipolar transistor ESBT 2200V - 3A - 0.33OHM
|
STMICROELECTRONICS[STMicroelectronics]
|
| STC03DE170HP C03DE170HP |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.55OHM
|
STMICROELECTRONICS[STMicroelectronics]
|
| STC08IE120HP C08IE120HP |
Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm 发射极开关双极晶体管内酰胺酶1200 8A 0.10欧姆
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STC08DE150 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR - ESBT" 1500 V - 8 A - 0.075 Ohm
|
ST Microelectronics
|
| MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
| AT-38086-TR1 AT-38086-BLK AT-38086 |
4.8 V NPN Silicon Bipolar Common Emitter Transistor
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| PWB PWB-5000 PWB-5001 PWB-5005 |
TRANS,WALL,9VDC/300mA,F1, 2.5X5.5mm,UL/CUL
TRANS,WALL,9VDC/350mA,F2 2.1mm x 5.5 mm,UL/CUL
TRANS,WALL,12VDC/200MA,F2 2.1mm X 5.5mm,RT. ANGLE
TRANS,WALL,12VDC/200mA,LT GRAY F2,2.5mmX5.5mm,RANGL,UL/CSA 1-OUTPUT 5 W AC-DC REG PWR SUPPLY MODULE
|
Astrodyne, Inc.
|
| 2DA1774Q-7 2DA1774R-7 2DA1774Q-13 |
TRANS BIPOLAR -50V PNP SOT-523 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes, Inc.
DIODES INC
|
